Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

摘要

A detailed rate-equation-based model is developed to study carrier transporteffects on optical and electrical characteristics of the Multiple Quantum WellHeterojunction Bipolar Transistor Laser in time-domain. Simulation resultsextracted using numerical techniques in small-signal regime predict significantenhancement in device optical bandwidth when multiple quantum wells are used.Cavity length and base width are also modified to optimize the optoelectronicperformances of the device. An optical bandwidth of \approx 60GHz is achievedin the case of 5 quantum wells each of 70A widths and a cavity length of 200um.